| 摘要 |
PROBLEM TO BE SOLVED: To lower the reduction of the number of saturation electrons by a fining in a solid-state image sensing device. SOLUTION: A signal storage 102, a gate electrode 104 formed on a p-well through a gate oxide film 103 adjacent to the signal storage 102, and a drain region 105 formed on a surface section on the reverse side to the signal storage of the gate electrode 104, are formed in the p-well 101. A surface shielding layer 201 formed to a p-well surface in the upper section of the signal storage 102, an element isolator 107, and defect inhibiting layers 108 formed on the side faces and base of the element isolator 107, are further formed in the p-well 101. The surface shielding layer 201 is formed without being brought into contact with the element isolator 107, and the impurity concentration of the surface shielding layer 201 is lower than a center in a section close to the element isolator 107. COPYRIGHT: (C)2007,JPO&INPIT
|
