| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of preventing the generation of surface voids. SOLUTION: The manufacturing method includes a process for arraying a plurality of semiconductor chips 4 and 6 on a substrate 1; a process in which a mold 8 is put on the substrate 1, and resin is injected in a cavity 9 between the substrate 1 and the mold 8 so that a plurality of semiconductor chips 4 and 6 are collectively resin-sealed; and a process for cutting the substrate 1 and the resin into semiconductor chips 4 and 6. A resin injection gate 10 is formed for injecting the resin on one side of the mold 8. An air vent for degassing is formed on the side opposite to one side of the mold 8. The direction of injecting the resin is oriented toward a side where the air vent is formed from a side where the resin injection gate 10 is formed. The mold 8 comprises mold projections 8a, 8b, and 8c that extend downward in the resin injection path between the semiconductor chips 4 and 6 extending in the resin injecting direction outside a product region. The interval between the substrate 1 and the mold projections 8a, 8b, and 8c is shorter than the half of the maximum thickness of the resin. COPYRIGHT: (C)2007,JPO&INPIT
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