| 摘要 |
PROBLEM TO BE SOLVED: To manufacture an organic thin film transistor using a low molecular weight organic semiconductor at low cost by reducing a mask step in a vacuum process. SOLUTION: The method of manufacturing the organic thin film transistor uses a laminate S1 having a gate electrode 102 on a substrate 101, and a gate insulating film 103 on the surface of the gate electrode 102 and the substrate 101. The method includes the steps of: arranging a mask 108 having a predetermined pattern-shaped opening while being spaced apart from the laminate S1 (a); forming an organic semiconductor film 104 in the element forming region of the laminate S1 by ejecting an organic semiconductor material, in the directions including inclined directions, to the mask 108 (b); and forming a source electrode 105 and a drain electrode 106 in the element forming region of the laminate S1 by using the mask 108 and ejecting an electrode material in the direction substantially perpendicular to the mask 108 (c). The organic thin film transistor manufactured by this method is also provided. COPYRIGHT: (C)2007,JPO&INPIT
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