| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with reduced source inductance, improved heat radiation characteristics, high output, good frequency characteristics and high performance. SOLUTION: A gate electrode 16 formed of a metallic layer forming a Schottky barrier, a source electrode 18 and a drain electrode 11 made of ohmic metal are formed on an operating region 15 of a semiconductor substrate. A region outside the operation region 15 serves as an insulation region. The source electrode 18 is connected with a source electrode pad 10 via a wire 17. Via holes 13 and 14 are simultaneously formed immediately under the source electrode 18 and the source electrode pad 10, and the holes differ in dimensions. COPYRIGHT: (C)2007,JPO&INPIT
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