| 摘要 |
PROBLEM TO BE SOLVED: To suppress damage given to a low dielectric constant film (Low-k film) formed on a workpiece and a base film more than before. SOLUTION: A plasma ashing method has a first ashing process for supplying reaction product removal raw gas comprising CO<SB>2</SB>gas into a treatment chamber 102, generating plasma of reaction product removal raw gas by applying high frequency power to an upper electrode 121, and removing a reaction product attached to an inner wall of the treatment chamber in a state where high frequency power is not applied to a lower electrode; and a second ashing process for supplying ashing raw gas into the treatment chamber, generating plasma of ashing raw gas by applying high frequency power to the upper electrode, and removing a resist film in a state where high frequency power is applied to the lower electrode. COPYRIGHT: (C)2007,JPO&INPIT
|
