发明名称 Semiconductor device comprising a Plurality of semiconductor constructs
摘要 A semiconductor device includes a first semiconductor construct provided on a base plate and having a semiconductor substrate and external connection electrodes. An insulating layer is provided on the base plate around the first semiconductor construct. An upper layer insulating film is provided on the first semiconductor construct and insulating layer. Upper layer wiring lines are provided on the upper layer insulating film so that the upper layer wiring line is electrically connected to the external connection electrode. A second semiconductor construct is joined to and installed on connection pad portions. All jointing portions of the second semiconductor construct for the connection pad portions of the upper layer wiring lines are disposed in a region corresponding to the first semiconductor construct.
申请公布号 US2007069272(A1) 申请公布日期 2007.03.29
申请号 US20060524481 申请日期 2006.09.20
申请人 CASIO COMPUTER CO., LTD. 发明人 WAKABAYASHI TAKESHI;MIHARA ICHIRO
分类号 H01L29/94;H01L23/48;H01L23/52;H01L27/108;H01L29/40;H01L29/76;H01L31/119 主分类号 H01L29/94
代理机构 代理人
主权项
地址