发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
<p>A BGA type semiconductor device having high reliability is offered. A pad electrode (53) is formed on a surface of a semiconductor substrate (51) and a glass substrate (56) is bonded to the surface of the semiconductor substrate. A via hole (VH) is formed from a back surface of the semiconductor substrate (51) to reach a surface of the pad electrode (53). An insulation film is formed on an entire back surface of the semiconductor substrate (51) including an inside of the via hole (VH). A cushioning pad (60) is formed on the insulation film. The insulation film is removed from a bottom portion of the via hole (VH) by etching. A wiring (63) connected with the pad electrode (53) is formed to extend from the via hole (VH) onto the cushioning pad (60). A conductive terminal (66) is formed on the wirinq (63). Then the semiconductor substrate (51) is separated into a plurality of semiconductor dice.</p> |
申请公布号 |
EP1482553(A3) |
申请公布日期 |
2007.03.28 |
申请号 |
EP20040012460 |
申请日期 |
2004.05.26 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
TAKAO, YUKIHIRO |
分类号 |
H01L23/498;H01L21/60;H01L21/768;H01L23/31;H01L23/48;H01L23/485 |
主分类号 |
H01L23/498 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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