| 摘要 |
A method of fabricating an air-gap structure for MEMSs(MicroElectroMechanical Systems) is provided to selectively etch a thick oxide layer by forming a micro channel with a rapid etching speed of a high concentration impurity thin film. A method of fabricating an air-gap structure for MEMSs includes the steps of forming a first conductive layer on a top of a first surface(100a) of a substrate(100), forming a plurality of stoppers on the first conductive layer, forming an etching hole on a predetermined region of the first conductive layer, forming a sacrificial layer including a high concentration impurity material thin film on the first conductive layer and the stopper, forming a second conductive layer on the sacrificial layer, and forming a cavity on the first conductive layer by removing the sacrificial layer including the high concentration impurity thin film with a wet etching method through an etching hole of the first conductive layer.
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