发明名称 Tough diamonds and method of making thereof
摘要 A single crystal diamond grown by microwave plasma chemical vapor deposition annealed at pressures in excess of 4.0 GPa and heated to temperature in excess of 1500 degrees C. that has a hardness of greater than 120 GPa. A method for manufacture a hard single crystal diamond includes growing a single crystal diamond and annealing the single crystal diamond at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C. to have a hardness in excess of 120 GPa.
申请公布号 ZA200600884(B) 申请公布日期 2007.03.28
申请号 ZA20060000884 申请日期 2006.01.31
申请人 CARNEGIE INSTITUTION OF WASHINGTON 发明人 RUSSELL, J. HEMLEY;HO-KWANG MAO;CHIH-SHIUE YAN
分类号 C30B;C30B7/00;C30B21/02;C30B23/00;C30B25/00;C30B25/10;C30B28/06;C30B28/12;C30B28/14;C30B29/04;C30B33/00;C30B33/02;G11B27/034;G11B27/036;G11B27/10;G11B27/11;G11B27/34;H04N5/76;H04N5/765;H04N5/775;H04N5/781;H04N9/804;H04N9/82 主分类号 C30B
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