PLASMA CVD APPARATUS AND METHOD

摘要

The objective of this invention is to provide a plasma CVD apparatus and method of forming a high quality thin film having an excellent uniformity of thickness on a large-sized substrate. A plasma CVD apparatus of the invention comprises, in a reaction chamber, an inductively coupled electrode which is straight line or folded back at the center and has a feeding portion at the first end and a grounded portion at the second end, wherein the electrode has a diameter of 10 mm or less partially or entirely between the feeding portion and the grounded portion, the diameter of the electrode is changed, or the electrode is partially or entirely covered with a dielectric, and whereby high frequency power is fed so as to establish a standing wave of natural number multiple of a half wavelength between the feeding portion and the grounded portion or between the feeding and grounded portions and the turning portion.