| 摘要 |
<p>A semiconductor device has excellent bonding strength of bumps (38) with their respective protruded electrodes (32) and has high reliability. A wiring pattern (28) to be connected to an electrode (22) of a semiconductor chip (20) is formed on an insulating film (23) formed on the semiconductor chip (20) in which the electrode (20) is formed. Protruded electrodes (32) are formed on the wiring pattern (28). The wiring pattern (28) is covered with a protective film (36), and a bump (38) for external connection is formed on the end portion of each of the protruded electrodes (32) exposed from the protective film (36). The bump (38) is formed in such a manner that the bump is bonded to at least the entire end face of each of the protruded electrodes (32). <IMAGE></p> |
