摘要 |
A method for manufacturing a light-emitting diode (LED), which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate until making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type. |
申请人 |
SONY CORPORATION |
发明人 |
OHMAE, AKIRA;SHIOMI, MICHINORI;FUTAGAWA, NORIYUKI;AMI, TAKAAKI;MIYAJIMA, TAKAO;HIRAMATSU, YUUJI;HATADA, IZUHO;OKANO, NOBUKATA;TOMIYA, SHIGETAKA;YANASHIMA, KATSUNORI;HINO, TOMONORI;NARUI, HIRONOBU |