发明名称 Semiconductor power module with overcurrent protection means
摘要 A semiconductor power module (1) with an excess current protection unit comprises a housing with external load connections (42, 44, 46) and a substrate with mutually insulated metallic connection tracks of different polarity, at least one with a semiconductor power element (70, 72) with a connection of given cross-section. A fuse unit comprises a second connection element of smaller lead cross-section between two tracks or a track and a load connection and this unit is encased in a section of explosion-protecting material.
申请公布号 EP1768182(A2) 申请公布日期 2007.03.28
申请号 EP20060020214 申请日期 2006.09.27
申请人 SEMIKRON ELEKTRONIK GMBH & CO. KG PATENTABTEILUNG 发明人 KRONEDER, CHRISTIAN;SCHREIBER, DEJAN;SCHEUERMANN, UWE, DR.
分类号 H01L23/62;H01L23/24;H01L23/373;H01L25/07 主分类号 H01L23/62
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