发明名称 An parameter change method of wafer laser sawing apparatus and device therefore
摘要 A parameter change method of a wafer laser sawing apparatus and its device are provided to perform smoothly a cutting process by setting automatically a parameter corresponding to thickness of a wafer. A thickness measurement process is performed to measure the thickness of a wafer on a chuck table(S100). A parameter detection process is performed to detect a parameter corresponding to the thickness of the wafer(S200). A parameter identification process is performed to identify the presence of the parameter corresponding to the thickness of the wafer(S300). A setting value decision process is performed to decide a setting value with the corresponding parameter when the corresponding parameter is identified(S400). An error signal is outputted and an error message is displayed when the corresponding parameter is not identified(S500).
申请公布号 KR100699247(B1) 申请公布日期 2007.03.28
申请号 KR20060115282 申请日期 2006.11.21
申请人 发明人
分类号 H01L21/301 主分类号 H01L21/301
代理机构 代理人
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