| 摘要 |
A phase change random access memory device and a driving voltage generating method thereof are provided to increase operation speed and to reduce current consumption by changing the number of charge pumps according to the number of selected cells. A phase change random access memory device includes a memory cell array block(140), a column decoder(130), a row decoder(150), a column selector(120), a write driver(110), a write boost unit(160), a column boost unit(170), and a row boost unit(180). The write boost unit steps up a first voltage and generates a write driving voltage for driving a write driver. The column boost unit steps up the first voltage and generates a column driving voltage for driving a column decoder. The row boost unit boosts the first voltage and generates a row driving voltage for driving a row decoder.
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