| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory which has nonvolatility as flash memory, and enables high speed access as SRAM and element integration surpassing in scale DRAM, and works on low-voltage and low consumption power to be capable of operating under small battery drive. <P>SOLUTION: The nonvolatile memory is a Schottky junction type nonvolatile memory, which utilizes an interface state, which is formed on the inner surface of micropores of a metal porous oxide film as a charge retainer for the memory. According to the Schottky junction type nonvolatile memory, a pair of electrodes is composed of a board electrode, a metal porous oxide film that is formed by subjecting the surface of the board electrode to an anordic oxidation process, and a metal electrode that is connected in Schottky junction to the surface of the metal porous oxide film by a vapor deposition or sputtering process. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
