| 发明名称 |
Method for etching smooth sidewalls in III-V based compounds for electro-optical devices |
| 摘要 |
III-V based compounds are etched to produce smooth sidewalls for electro-optical applications using BCl<SUB>3 </SUB>together with chemistries of CH<SUB>4 </SUB>and H<SUB>2 </SUB>in RIE and/or ICP systems. HI or IBr or some combination of group VII gaseous species (Br, F, I) may be added in accordance with the invention.
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| 申请公布号 |
US7196017(B2) |
申请公布日期 |
2007.03.27 |
| 申请号 |
US20030692772 |
申请日期 |
2003.10.24 |
| 申请人 |
AVAGO TECHNOLOGIES FIBER IP (SINGAPORE) PTE. LTD. |
发明人 |
MIRKARIMI LAURA WILLS;CHOW KAI CHEUNG |
| 分类号 |
H01L21/302;G03F7/20;H01L21/00;H01L21/306;H01L21/3065;H01L21/3213;H01L21/461 |
主分类号 |
H01L21/302 |
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