发明名称 Semiconductor laser apparatus
摘要 A semiconductor laser apparatus capable of reducing a spread angle of emission light with downsizing has an active region between first and second end surfaces. A first reflection structure and a partial reflection structure are provided on the first end surface side. The end surface of the active region is divided into a total reflection region and a partial reflection region in combination with the first reflection structure and partial reflection structure. A laser resonator includes the first reflection structure and partial reflection structure. A second reflection structure is positioned on the way of a resonance optical path of the laser resonator. Light emitted within the active region propagates on a resonance optical path. An induction emission is produced. The semiconductor laser carries out a laser oscillation. Of the light arriving at the partial reflection structure, the portion transmitted through the partial reflection structure is outputted outside the apparatus.
申请公布号 US7197058(B2) 申请公布日期 2007.03.27
申请号 US20040018573 申请日期 2004.12.22
申请人 HAMAMATSU PHOTONICS K.K. 发明人 GAO XIN;ZHENG YUJIN
分类号 H01S5/00;H01S3/08;H01S3/082;H01S5/028;H01S5/10;H01S5/40 主分类号 H01S5/00
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