| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent the generation of ablation in a crystallizing process on amorphous silicon by forming a heat radiating path within a peripheral region. An insulating layer is formed on a substrate(110) with a cell region(A) and a peripheral region(B). A plurality of contact holes are formed on the resultant structure by patterning selectively the insulating layer of the cell region. A silicon plug(125) is formed in each contact hole. An amorphous silicon layer(130as) is formed on the resultant structure. A heat radiating path(130e) is formed on the amorphous silicon layer of the peripheral region. A single crystal silicon layer is formed by applying a predetermined energy to the amorphous silicon layer.
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