发明名称 |
Interconnect structure with dielectric barrier and fabrication method thereof |
摘要 |
An interconnect structure with dielectric barrier and fabrication thereof. The interconnect structure includes a semiconductor substrate and a plurality of stacked structures formed thereon, each stacked structure including a conductive line and a conductive plug thereon. A conformal dielectric barrier is formed over the surfaces of the stacked structures and a blanket second dielectric layer is formed over the dielectric barrier to form an inter-metal layer.
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申请公布号 |
US7196423(B2) |
申请公布日期 |
2007.03.27 |
申请号 |
US20040811186 |
申请日期 |
2004.03.26 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
WU ZHEN-CHENG;CHEN YING-TSUNG;LU YUN-CHENG;JANG SYUN-MING |
分类号 |
H01L23/48;H01L21/4763;H01L21/768;H01L23/52;H01L23/532 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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