发明名称 Interconnect structure with dielectric barrier and fabrication method thereof
摘要 An interconnect structure with dielectric barrier and fabrication thereof. The interconnect structure includes a semiconductor substrate and a plurality of stacked structures formed thereon, each stacked structure including a conductive line and a conductive plug thereon. A conformal dielectric barrier is formed over the surfaces of the stacked structures and a blanket second dielectric layer is formed over the dielectric barrier to form an inter-metal layer.
申请公布号 US7196423(B2) 申请公布日期 2007.03.27
申请号 US20040811186 申请日期 2004.03.26
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 WU ZHEN-CHENG;CHEN YING-TSUNG;LU YUN-CHENG;JANG SYUN-MING
分类号 H01L23/48;H01L21/4763;H01L21/768;H01L23/52;H01L23/532 主分类号 H01L23/48
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