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发明名称
LASER THERMAL ANNEALING OF LIGHTLY DOPED SILICON SUBSTRATES
摘要
申请公布号
KR100699211(B1)
申请公布日期
2007.03.27
申请号
KR20050005988
申请日期
2005.01.21
申请人
发明人
分类号
H01L21/26;H01L21/268
主分类号
H01L21/26
代理机构
代理人
主权项
地址
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