| 摘要 |
A method of making a current type active matrix OLED device, includes providing a semiconductor layer, a conductive layer, and an insulator layer therebetween over a substrate, providing an organic light emitting diode over either the semiconductor layer or over the conductive layer for each pixel, and forming a first transistor having a channel region formed in the semiconductor layer and a gate formed in the conductive layer for each pixel for receiving a first current data signal for adjusting the emission brightness in its corresponding pixel. The method also includes forming a second transistor for each pixel for regulating current through the organic light emitting diode in response to the first current wherein each second transistor has a gate formed in the conductive layer and a channel region formed in the semiconductor layer, and annealing particular regions of the semiconductor layer by using a pulsed laser.
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