发明名称 |
High-voltage MOS transistor |
摘要 |
A method for fabricating a high-voltage MOS transistor. A first doping region with a first dosage is formed in a substrate. A gate structure is formed overlying the substrate and partially covers the first doping region. The substrate is ion implanted using the gate structure as a mask to simultaneously form a second doping region with a second dosage within the first doping region to serve as a drain region and form a third doping region with the second dosage in the substrate to serve as a source region. A channel region is formed in the substrate between the first and third doping regions when the high-voltage MOS transistor is turned on to pass current between the source and drain regions, where a resistance per unit length of the channel region is substantially equal to that of the first doping region. A high-voltage MOS transistor is also disclosed.
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申请公布号 |
US7196375(B2) |
申请公布日期 |
2007.03.27 |
申请号 |
US20040801234 |
申请日期 |
2004.03.16 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN FU-HSIN;LIU RUEY-HSIN |
分类号 |
H01L29/76;H01L21/336;H01L21/822;H01L29/94 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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