发明名称 |
HDP-CVD deposition process for filling high aspect ratio gaps |
摘要 |
A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a silicon-containing source, an oxygen-containing source and a fluorine-containing source into the substrate processing chamber and forming a plasma from said process gas. The substrate is heated to a temperature above 450° C. during deposition of said silicon oxide layer and the deposited layer has a fluorine content of less than 1.0 atomic percent.
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申请公布号 |
US7196021(B2) |
申请公布日期 |
2007.03.27 |
申请号 |
US20050095704 |
申请日期 |
2005.03.30 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
TAN ZHENGQUAN;LI DONGQING;ZYGMUNT WALTER |
分类号 |
H01L21/31;C23C16/40;C23C16/44;C23C16/455;C23C16/507;H01L21/314;H01L21/316;H01L21/762 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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