发明名称 Pattern forming method and electric device fabricating method using the same
摘要 A pattern forming method includes: forming an etching-subject layer on a substrate; forming a Ti layer on the etching-subject layer; forming a TiOx layer by irradiating light on a portion of the Ti layer using a mask; etching the Ti layer to form a TiOx pattern; etching the etching-subject layer using the TiOx pattern as a mask; and removing the TiOx pattern.
申请公布号 US7196015(B2) 申请公布日期 2007.03.27
申请号 US20030669467 申请日期 2003.09.25
申请人 LG.PHILIPS LCD CO., LTD. 发明人 CHAE GEE-SUNG;JO GYOO-CHUL;HWANG YONG-SUP
分类号 H01L21/302;H01L21/3065;H01L21/027;H01L21/033;H01L21/28;H01L21/3213;H01L21/336 主分类号 H01L21/302
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