发明名称 Selectable memory word line deactivation
摘要 Circuitry and methods allow selected memory word lines (WLs) to be deactivated without using a global deactivate signal. All active WLs do not therefore have to be deactivated simultaneously, which can cause voltage at a common deactivate node to rise undesirably. This undesirable voltage rise can adversely affect a system by, for example, inadvertently activating an inactive WL. The invention advantageously limits the voltage fluctuation at the common deactivate node.
申请公布号 US7196964(B2) 申请公布日期 2007.03.27
申请号 US20040759388 申请日期 2004.01.15
申请人 MICRON TECHNOLOGY, INC. 发明人 FUJIWARA YOSHINORI
分类号 G11C8/00;G11C11/407;G11C8/08 主分类号 G11C8/00
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