发明名称 |
Methods of fabricating semiconductor devices including polysilicon resistors and related devices |
摘要 |
Methods of fabricating semiconductor devices are provided. Transistors are provided on a semiconductor substrate. A first interlayer insulating layer is provided on the transistors. A second interlayer insulating layer is provided on the first interlayer insulating layer. The second interlayer insulating layer defines a trench such that at least a portion of an upper surface of the first interlayer insulating layer is exposed. A resistor pattern is provided in the trench such that the at least a portion of the resistor pattern contacts the exposed portion of the first interlayer insulating layer. Related methods are also provided.
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申请公布号 |
US7195966(B2) |
申请公布日期 |
2007.03.27 |
申请号 |
US20040011644 |
申请日期 |
2004.12.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK JIN-TAEK;CHOI JUNG-DAL;LEE JUNG-YOUNG;KIM HYUN-SUK |
分类号 |
H01L21/336;H01L27/04;H01L21/44;H01L21/8234;H01L21/8242;H01L21/8244;H01L21/8247;H01L27/06;H01L27/115 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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