High voltage transistor, block selection circuits of flash memory device for including the high voltage transistor, and method of manufacturing the high voltage transistor

摘要

A high voltage transistor, a block select circuit of a flash memory device including the same, and a method for manufacturing the high voltage transistor are provided to increase coupling capacitance of the high voltage transistor and a program speed of the flash memory device by including gate taps formed in a body with a gate electrode. A gate electrode(110) comprises a gate oxide layer(111), a poly silicon layer(112), and a silicide layer(113) are sequentially laminated on an upper portion of a semiconductor substrate(101). Source and drain regions are respectively formed on partial regions of a surface of the semiconductor substrate at both sides of the gate electrode. Gate taps(130a,130b) include the gate oxide layer, the poly silicon layer, and the silicide layer sequentially laminated on other partial regions of an upper portion of the semiconductor substrate of at both sides of the gate electrode. The gate taps are formed in a body with the gate electrode to increase a coupling capacitance of the gate electrode.