| 摘要 |
A growing apparatus of a high quality silicon crystalline ingot and a growing method using the same are provided to increase a growth speed of the high quality silicon crystalline ingot by using a heater having a maximum caloric power at a specific position in a furnace. A furnace(20) is installed on an inner of a chamber(10) and contains a silicon solution. A heater(40) is installed at a side of the furnace to heat the silicon solution. The heater has a maximum caloric power at a specific position(Tp) in the furnace. A lifting unit lifts a silicon crystal grown from the silicon solution. The specific position of the maximum caloric power is formed corresponding to a position of 30mm over and 120mm below from a surface of the silicon solution. |
