发明名称 Method of manufacturing a low expansion material and semiconductor device using the low expansion material
摘要 A mold is filled with unsintered SiC particles and a melt of Al or of an Al alloy containing Si is poured into the mold for high pressure casting. Owing to the SiC particles and Si precipitated upon casting, a low expansion material having a low thermal expansion coefficient is produced. A heat transmission path is formed by Al infiltrating spaces between the SiC particles and therefore high heat conductivity is obtained.
申请公布号 US7196417(B2) 申请公布日期 2007.03.27
申请号 US20030626418 申请日期 2003.07.23
申请人 KABUSHIKI KAISHA TOYOTA JIDOSHOKKI 发明人 SUGIYAMA TOMOHEI;KINOSHITA KYOICHI;YOSHIDA TAKASHI;KUDO HIDEHIRO;KONO EIJI
分类号 H01L23/34;B22D19/14;C04B35/565;C04B35/653;C04B41/50;C04B41/51;C22C1/10;H01L21/48;H01L23/15;H01L23/373 主分类号 H01L23/34
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