发明名称 |
Method of manufacturing a low expansion material and semiconductor device using the low expansion material |
摘要 |
A mold is filled with unsintered SiC particles and a melt of Al or of an Al alloy containing Si is poured into the mold for high pressure casting. Owing to the SiC particles and Si precipitated upon casting, a low expansion material having a low thermal expansion coefficient is produced. A heat transmission path is formed by Al infiltrating spaces between the SiC particles and therefore high heat conductivity is obtained.
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申请公布号 |
US7196417(B2) |
申请公布日期 |
2007.03.27 |
申请号 |
US20030626418 |
申请日期 |
2003.07.23 |
申请人 |
KABUSHIKI KAISHA TOYOTA JIDOSHOKKI |
发明人 |
SUGIYAMA TOMOHEI;KINOSHITA KYOICHI;YOSHIDA TAKASHI;KUDO HIDEHIRO;KONO EIJI |
分类号 |
H01L23/34;B22D19/14;C04B35/565;C04B35/653;C04B41/50;C04B41/51;C22C1/10;H01L21/48;H01L23/15;H01L23/373 |
主分类号 |
H01L23/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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