发明名称 |
Semiconductor etching paste and the use thereof for localized etching of semiconductor substrates |
摘要 |
A method of etching a semiconductor substrate is described, the method comprising the steps of applying a paste containing an etchant to the substrate, and carrying out a thermal processing step to etch a part or a layer of the substrate where the paste has been applied. The etchant paste is preferably a caustic etching paste. The etchant paste may be applied selectively to a major surface of the substrate to form a pattern of applied paste. For example, the paste may be applied by a printing method, such as screen-printing. The method may be used to produce solar cells.
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申请公布号 |
US7196018(B2) |
申请公布日期 |
2007.03.27 |
申请号 |
US20030609015 |
申请日期 |
2003.06.27 |
申请人 |
INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW |
发明人 |
SZLUFCIK JOZEF;VAN KERSCHAVER EMMANUEL;ALLEBE CHRISTOPHE |
分类号 |
H01L21/302;C09K13/02;H01L31/068;H01L31/18 |
主分类号 |
H01L21/302 |
代理机构 |
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地址 |
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