发明名称 Semiconductor etching paste and the use thereof for localized etching of semiconductor substrates
摘要 A method of etching a semiconductor substrate is described, the method comprising the steps of applying a paste containing an etchant to the substrate, and carrying out a thermal processing step to etch a part or a layer of the substrate where the paste has been applied. The etchant paste is preferably a caustic etching paste. The etchant paste may be applied selectively to a major surface of the substrate to form a pattern of applied paste. For example, the paste may be applied by a printing method, such as screen-printing. The method may be used to produce solar cells.
申请公布号 US7196018(B2) 申请公布日期 2007.03.27
申请号 US20030609015 申请日期 2003.06.27
申请人 INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW 发明人 SZLUFCIK JOZEF;VAN KERSCHAVER EMMANUEL;ALLEBE CHRISTOPHE
分类号 H01L21/302;C09K13/02;H01L31/068;H01L31/18 主分类号 H01L21/302
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