| 摘要 |
A method for manufacturing a thermal oxide layer using a single chamber type CVD apparatus and a manufacturing method thereof are provided to prevent degradation of electrical characteristics, thermal deformation of a metal wiring, and rediffusion of implanted impurity. A single wafer type chamber(10) comprises a chamber(11) provided with an introduction unit(12) for supplying a gas and a vacuum port(17) for exhausting the gas after a deposition, a shower head(13) for spraying the gas supplied form the introduction unit, a heater(14) on which a wafer(13) is placed, and a heater supporter(16) for supporting the heater. DCS(Dicholro Silane) gas is used as silicon source gas and N2O gas is used as an oxydizing agent source gas.
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