发明名称 Permalloy sensor having individual permalloy resist pattern runners with lengths perpendicular to a wafer level anisotropy
摘要 A permalloy sensor having high sensitivity is presented A substrate and a sensor has a first surface having a wafer level anisotropy in a given direction. A permalloy resistor pattern of individual runners is deposited on the surface such that the mechanical length of each of said individual runners is perpendicular to the wafer level anisotropy to cause the sensor to have an anisotropy of about 90°. The permalloy is deposited as a thin film and a silicon wafer is the preferred substrate.
申请公布号 US7196875(B2) 申请公布日期 2007.03.27
申请号 US20040811473 申请日期 2004.03.24
申请人 HONEYWELL INTERNATIONAL INC. 发明人 CHILCOTE JASON M;HOLMAN PERRY A.
分类号 G11B5/39;G01R33/09;G11B5/33;H01L43/08 主分类号 G11B5/39
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