A FERROELECTRIC OR ELECTRET MEMORY CIRCUIT

摘要

In a ferroelectric or electret memory circuit (C), particularly a ferroelectric or electret memory circuit with improved fatigue resistance, comprising a ferroelectric or electret memory cell with a polymer or oligomer memory material (2) contacting first and second electrodes, at least one of the electrodes comprises at least one functional material capable of physical and/or chemic al bulk incorporation of atomic or molecular species contained in either the electrode (1a;1b) or the memory material (2) and displaying a propensity for migrating in the form of mobile charged and/or neutral particles between an electrode and a memory material, something which can be detrimental to both. A functional material (3) with the above mentioned properties shall serve to offset any adverse effect of a migration of this kind, leading to an improvement in the fatigue resistance of the memory cell (C). Use in a matrix-addressabl e memory device where the memory cells (C) are formed in distinct portions in a global layer of a ferroelectric or electret thin-film memory material (2), particularly a polymer material.