发明名称 Exchange coupling film and magnetoresistive element using the same
摘要 A PtMn alloy film known as an antiferromagnetic material having excellent corrosion resistance is used for an antiferromagnetic layer. However, an exchange coupling magnetic field is decreased depending upon the conditions of crystal grain boundaries. Therefore, in the present invention, the crystal grain boundaries formed in an antiferromagnetic layer (PtMn alloy film) and the crystal grain boundaries formed in a ferromagnetic layer are made discontinuous in at least a portion of the interface between both layers. As a result, the antiferromagnetic layer can be appropriately transformed to an ordered lattice by heat treatment to obtain a larger exchange coupling magnetic field than a conventional element.
申请公布号 US7196879(B2) 申请公布日期 2007.03.27
申请号 US20050303361 申请日期 2005.12.16
申请人 发明人
分类号 G11B5/39;H01F10/32 主分类号 G11B5/39
代理机构 代理人
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