| 摘要 |
A method for manufacturing a high voltage semiconductor apparatus is provided to improve thickness uniformity of a gate dielectric by forming the gate dielectric using oxygen radicals. A substrate(100) where a cell region and a peripheral circuit region are defined is provided. The peripheral circuit region includes a high voltage region and a low voltage region. An isolation layer(104) is formed on the high voltage region to define an active region. A reactive gas containing oxygen radicals is provided on the active region to form a gate dielectric. A conductive layer is formed on the gate dielectric. The gate dielectric and the conductive layer are formed into a gate electrode(108) and a dielectric pattern(106a). Source/drain regions are formed on surfaces of the active region adjacent to the gate electrode.
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