发明名称 Flash memory device for recharging pumping voltage and recharge method thereof
摘要 A flash memory device for recharging a pumping voltage and a pumping voltage recharging method thereof are provided to reduce power consumption and to improve noise characteristics due to pumping by reducing the number of pumping to generate the next program voltage. A flash memory device comprises a first high voltage line(140) and a second high voltage line(150). A switch circuit(310) is connected between the first high voltage line and the second high voltage line, and transfers a program voltage of the first high voltage line to the second high voltage line during the previous program operation, and transfers a voltage of the second high voltage line to the first high voltage line in the next program operation. Pump circuits(112,122) provide the program voltage to the first and second high voltage lines, respectively.
申请公布号 KR20070033193(A) 申请公布日期 2007.03.26
申请号 KR20050087635 申请日期 2005.09.21
申请人 发明人
分类号 G11C16/30;G11C5/14 主分类号 G11C16/30
代理机构 代理人
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