| 摘要 |
A method for measuring component density of a semiconductor thin film is provided to improve reliability of measurement by preventing the contamination of a pre-treatment apparatus and performing a pre-treatment on a pure dissolved material alone of the semiconductor thin film. A BPSG(Boron-Phosphorus-Silicate Glass) layer is dissolved from a first surface of a semiconductor substrate by using a mixed solution of HF and H2O2(S130). A portion is extracted from the BPSG dissolved solution(S150). Component density is measured from the extracted portion of the BPSG dissolved solution.
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