| 摘要 |
<p>A CMOS image device for restraining a substrate stress and a manufacturing method thereof are provided to reduce a charge trap due to the substrate stress and to prevent a dark current of the image device by forming an isolation layer of an active pixel region with a local oxidation method by means of a buffer layer. A semiconductor substrate(201) having an active pixel region(A) and a logic circuit unit(L) is provided. An isolation layer is formed on the logic circuit unit. A pad oxide layer(215) is formed on the semiconductor substrate. A buffer layer(220) is formed on an upper portion of the pad oxide layer. An anti-oxidation mask is formed on an upper portion of the buffer layer to expose an isolation forming region of the active pixel region. The buffer layer exposed by the anti-oxidation mask is oxidized. The remaining anti-oxidation mask, the buffer layer, and the pad oxide layer are removed to form the isolation layer on the active pixel region. The isolation layer defines an active region where photo diode and transistor groups are formed.</p> |
