| 摘要 |
#CMT# #/CMT# The formation of a layer of dielectric material on a carrier material (31) comprises: (A) circulating, in contact with the carrier material, a gas mixture (16) containing a precursor of a metal then an oxidizing gas (17) in conditions to form a first dielectric layer (32a); (B) circulating, in contact with the first dielectric layer, a gas mixture containing the precursor in second more intensely oxidizing conditions than that of the first operation. #CMT# : #/CMT# Independent claims are also included for: (1) a layer made up of at least one dielectric material obtained by this method; (2) an integrated circuit incorporating a condenser including this dielectric layer. #CMT#USE : #/CMT# The invention is used for the deposition of a layer made up of at least one dielectric material in an integrated circuit, utilised for example for a condenser. It is notably applicable for semiconductor/dielectric/metal (MIS) condenser structure and for metal/dielectric/metal (MIM) condenser structures for fast dynamic memory applications. It can also be applied for the fabrication of the oxide gate of a MOS transistor. #CMT#ADVANTAGE : #/CMT# The invention allows the formation of a dielectric layer of high quality in stoichiometric terms whilst reducing to a minimum the thickness of the interface layer between the lower electrode and the dielectric layer. The use of lower oxidizing conditions in the first stage minimizes oxidation of the lower electrode. It allows the realization of an interface layer with a thickness of less than 5 angstroms which limits leakage currents to levels notably about 100 to 1000 times lower than for dielectric layers formed by conventional methods. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing illustrates schematically one of the stages in the formation of a dielectric layer according to the invention. 12 : Reaction chamber 13 : Plate support for carrier material 14, 15 : Injectors 16 : Gas mixture 17 : Oxidizing gas 18, 19 : Purging systems 20 : Purging gas 21, 22 : Injectors for second stage oxidizing conditions 23 : Oxidizing gas, preferably oxygen 24 : Plasma 31 : Carrier material 32a : First dielectric layer #CMT#INORGANIC CHEMISTRY : #/CMT# Preferred Mixture: The gas mixture contains tertiobutylimido-tris-diethyl amino tantalum (t- BuN=Ta(Net2)3) or tantalum pentaethoxide (Ta(OEt)5) (claimed). Preferred Materials: The carrier material is chosen from titanium nitride (TiN), tantalum nitride (TaN), copper, aluminum, tungsten, ruthenium, tungsten nitride (WN) and tungsten carbo-nitride (WCN) (claimed). The dielectric material is chosen from tantalum pentoxide (Ta2O5), alumina (Al2O3), titanium oxide (TiO2), zirconium oxide (ZrO2) and/or hafnium oxide (HfO2) (claimed). |
