| 摘要 |
A GaN-based semiconductor light emitting device using a neutral beam etching apparatus and a method for manufacturing the same are provided to form a photonic crystal on a p type nitride semiconductor layer by reducing damage of an active layer and the p type nitride semiconductor layer in a rough etch process. An n type nitride semiconductor layer(20), an active layer(30), and a p type semiconductor layer(40) are sequentially grown on a substrate(10). The active layer and the p nitride semiconductor layer are partially etched to expose a part of the n type nitride semiconductor layer. A hole having a predetermined pattern is formed on the p type semiconductor layer which is not etched in the etch process. An n type electrode and a p type electrode are formed on the n type nitride semiconductor layer and the p type nitride semiconductor layer, respectively. The predetermined pattern is formed by using a neutral beam etching apparatus.
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