| 摘要 |
A semiconductor device and a method for manufacturing the same are provided to improve hole mobility of a PMOS device by inducing compression stress to a gate channel using a barrier nitride layer. A source/drain region(208) is formed in a semiconductor substrate(200) of first conductive type by implanting a second conductive type impurity. A gate insulating layer(202) is formed on a channel between the source/drain region. A gate electrode(203) is formed on the gate insulating layer. Spacers(205a,206,207) of ONO structure are formed at both sidewalls of the gate electrode, wherein a groove is formed at the lower portion of the spacers. A salicide layer(210) is formed on the gate electrode and the source/drain region. A barrier nitride layer(211) is formed on the substrate and in the groove.
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