Method for fabricating storage node contact hole in semiconductor device

摘要

A method for forming a storage node contact hole in a semiconductor device is provided to secure a major axis space CD(Critical Dimension) of a storage node without performing an excessive exposing process by moving an exposing mask whose first exposure is performed to an upper portion or a lower portion of a Y-axis direction to perform a second exposure. An exposing mask having a light penetration region(220) and a light blocking region(210) is prepared on a transparent substrate(200). The light penetration region corresponds to a storage node contact hole forming region. The light blocking region defines the light penetration region. First exposure is performed on a photoresist layer on the semiconductor substrate by using the exposing mask. Second exposure is performed on the photoresist layer where the first exposure is performed by moving the exposing mask to a Y-axis direction. The first and the second exposed photoresist layers are developed to form a photoresist layer pattern exposing a storage node contact hole region. A storage node contact hole is formed by an etching process using the photoresist layer pattern as an etching mask. The photoresist layer pattern is removed.