| 摘要 |
<p>A semiconductor device and a manufacturing the semiconductor device using a pattern dummy are provided to obtain an aiming profile from a main pattern without the influence on operation of the device by forming the pattern dummy within an isolation region. A semiconductor device includes a main pattern and a pattern dummy. The main pattern(320) is arranged to be overlapped with an active region(310), wherein the active region is enclosed with an isolation region(300). The pattern dummy(340) is arranged on the isolation region. The pattern dummy is spaced apart from the active region.</p> |
