| 摘要 |
<p>A method for manufacturing an organic thin film transistor is provided to prevent damage of source/drain electrodes due to a laser by forming the organic thin film transistor with a top contact structure after patterning an organic semiconductor layer using the laser. A gate electrode(210) is formed on a region of a substrate(200) with a shape. Gate dielectrics(220) are formed on the gate electrode and the substrate. An organic semiconductor layer(230) is formed on a region of the gate dielectric with a shape. The organic semiconductor layer is patterned by using a laser. Interlayer dielectrics(240) are formed on the organic semiconductor layer and the gate dielectric. A contact hole is formed on the interlayer dielectric to expose at least one region of the organic semiconductor layer. Source/drain electrodes(250a,250b) are connected to one exposed region of the organic semiconductor layer. The source/drain electrodes are formed by using a metal material ohmic-contacted to the organic semiconductor layer.</p> |
