| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent the generation of sulfur-based residues by performing a dry cleaning process on a process chamber under an oxygen gas condition. A contact hole of a via hole is formed on a predetermined structure(401). A barrier metal is formed along an upper surface of the resultant structure(403). A tungsten film for filling the contact hole or the via hole is formed on the barrier metal(405). A first dry cleaning process is performed on a process chamber under an oxygen gas condition(407). An etch back process is performed on the tungsten film by using plasma gas(409). A second dry cleaning process is performed on the process chamber under the oxygen gas condition(411).
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