| 摘要 |
A method for manufacturing an MOS transistor is provided to improve threshold voltage and electrical property of the MOS transistor by forming a capping layer before performing a thermal oxidation process for curing damage of an insulating layer. A gate oxide layer(140a) and a gate electrode(140b) are sequentially formed on an active region of a semiconductor substrate(100). A capping layer(160) is formed on the resultant structure. A thermal oxidation process is then performed to the resultant structure having the capping layer. Then, an LDD(Lightly Doped Drain) region is formed in the substrate using the gate electrode as a mask.
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