OPTICAL SEMICONDUCTOR DEVICE COMPRISING InP SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a highly reliable and long-life semiconductor optical element ensuring higher characteristics such as the light emitting characteristic with a structure for obtaining type p carrier concentration of 1017cm-3or higher in the material which shows ordinary type p conductivity but realizes concentration even under 1017cm-3.

SOLUTION: Sufficient hole concentration of 1017cm-3or higher is obtained in the entire part of crystal of the material which usually can obtain the concentration merely under 1017cm-3with insertion in the adequate interval of the particular layer showing the sufficient carrier concentration of 1018cm-3or higher only in a single layer by inserting a ZnSe0.53Te0.47layer (2ML) as the particular layer to be inserted between the host layers Mg0.5Zn0.29Cd0.21Se layers (10ML(atomic layer) thickness) matched in the grating with the InP substrate.

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