| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing method of a semiconductor wafer which polishes the semiconductor wafer appropriately. <P>SOLUTION: In a slurry adjustment process in a slurry adjustment 150, a secondary polishing slurry adjustment liquid is supplied to a secondary polishing section 132. The secondary polishing slurry adjustment liquid is adjusted so that an Si/O composition ratio becomes 50 wt.% to 60 wt.%/40 wt.% to 50 wt.%, modulus of elasticity becomes 1.4×10<SP>10</SP>Pa or higher, and the number of dry silica whose grain diameter is 1μm or larger becomes 3,000/ml or smaller. In a secondary polishing process at the secondary polishing section 132, the secondary polishing slurry adjustment liquid supplied from the slurry adjustment 150 is utilized to perform the secondary polishing of a semiconductor wafer W. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
