| 摘要 |
PROBLEM TO BE SOLVED: To permit more easy forming of a thin wire structure having the thinner width of wiring and longer linearity under stable condition, or a wiring consisting of the thin wire structure. SOLUTION: A substrate (silicon substrate) 101 consisting of single crystal silicon having a principal surface (001) is prepared. The silicon substrate 101 is washed through so-called RCA washing employing washing solution consisting of ammonia hydrogen peroxide water, hydrochloric acid peroxide water, rare hydrofluoric acid, and sulfuric acid peroxide water. Then the washed silicon substrate 101 is carried into a processing chamber evacuated so as to be ultrahigh vacuum of the degree of 8×10<SP>-8</SP>Pa, for example, to heat until the temperatures higher than 1,200°C, to obtain a condition that the surface of silicon substrate 101 is cleaned. Next, the silicon substrate 101 is brought into the heated condition at 700-850°C, and gold (Au) is adsorbed to the surface thereof by deposition, for example, under the condition of maintaining the heated condition at 700-850°C to obtain a condition that an Au layer of the degree of 0.33-1.5 ml is formed on the surface of the silicon substrate 101. COPYRIGHT: (C)2007,JPO&INPIT |
